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HC-DSL09S0P1T2 136–941 MHz, 0.15W, 3.7 V BroadBand RF Power Transistor

HC-DSL09S0P1T2 136–941 MHz, 0.15W, 3.7 V BroadBand RF Power Transistor

136–941 MHz, 0.15W, 3.7 V BROADBAND RF POWER TRANSISTOR

contact us：lina@glhcoptical.com

Specification
Resources

 

 

N-Channel Enhancement-Mode MOSFET 

 

Designed for handheld two–way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and Broadband performance of this device make it ideal for large–signal, common–source amplifier applications in handheld radio equipment.

 

Typical Broadband EVB Performance (IDQ=90mA, TA = 25℃, CW)

 

VDS

Freq.

Gmax

Pout

PAE

[V]

[MHz]

[dB]

[dBm]

[mW]

[%]

3.7

400

17.5

22.0

160

53.4

440

16.0

23.2

210

67.4

480

15.4

23.2

210

64.4

520

13.8

23.0

200

61.3

 

Ÿ Capable of Handling 20:1 VSWR @ 6.0 Vdc, 0.2 Watts, CW

 

 

 Features

Ÿ Characterized for Operation from 136 to 941 MHz

Ÿ Unmatched Input and Output Allowing Broad Frequency Range Utilization

Ÿ Integrated ESD Protection

Ÿ Broadband – Full Power Across the Band

Ÿ Exceptional Thermal Performance

Ÿ Extreme Ruggedness

 

Typical Applications

Ÿ Output Stage VHF Band Handheld Radio

Ÿ Output Stage UHF Band Handheld Radio

Ÿ Output Stage for 700–800 MHz Handheld Radio

Ÿ Driver for 10–1000 MHz Applications

 

Table1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

–0.5, +20

Vdc

Gate-Source Voltage

VGS

–0.5, +8

Vdc

Operating Voltage

VDD

0, +6

Vdc

Storage Temperature Range

Tstg

–65 to +150

℃

Case Operating Temperature

TC

–40 to +150

℃

Operating Junction Temperature

TJ

–40 to +150

℃

Power Dissipation @TC=25℃

PD

0.25

Watts

 

Table 2. ESD Protection Characteristic

 

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

 

 

Table 3. Electrical Characteristics (TA=25℃ unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

Unit

Off Characteristics

 

Gate-Source Leakage Current

(VGS=5Vdc, VDS=0Vdc)

IGSS

-

-

500

nAdc

Zero Gate Voltage Drain Leakage Current

(VDS=16Vdc, VGS=0Vdc)

IDSS

-

-

100

nAdc

Zero Gate Voltage Drain Leakage Current

(VDS=3.7Vdc, VGS=0Vdc)

IDSS

-

-

100

nAdc

 

On Characteristics

 

Gate Threshold Voltage (VDS=3.7Vdc, ID=1mA)

VGS(th)

1.6

1.8

2.0

Vdc

Gate Quiescent Voltage (VDD=3.7Vdc, ID=90mA Measured in Functional Test)

VGS(Q)

2.2

2.6

2.8

Vdc

Drain-Source On-Voltage (VGS=5Vdc, ID=100mA)

VDS(ON)

-

0.28

-

Vdc

 

Dynamic Characteristics

 

Reverse Transfer Capacitance

(VDG=3.7V, Level=30mVac@1MHz)

Crss

-

0.25

-

pF

Output Capacitance

(VDS=3.7V, Level=30mVac@1MHz)

Coss

-

1.8

-

pF

Input Capacitance

(VGS=5V, Level=30mVac@1MHz)

Ciss

-

8.0

-

pF

 

Typical Performances (In DuSemi Narrowband Test DEMO，50 Ohm system)

Frequency=440MHz, VDD=3.7Vdc, ID(Q)=90mA, Pin=7dBm, TA=25℃

 

Output Power 

Pout

-

151

-

mW

Power Gain

GPS

-

15

-

dB

Drain Efficiency

 

ηD

-

50

-

%

 

 

 

Broad Band Evaluation Circuit (@VDD = 3.7V, f = 440 MHz)

 

 

 

Table 5. Test Circuit Component Designations and Value

 

 

Part

Description

Part Number

Manufacturer

R3

470Ohm

—

—

R4

6.8KOhm

—

—

L1, L2

4.7nH

—

—

L3

8 Turns D: 0.5 mm,

φ 2.4 mm Enamel Wire

—

—

C3,C15,

100pF Chip Capacitors

GQM21P5C1H101JB01

Murata

C4

18pF Chip Capacitors

GRM1885C1H201JA01

Murata

C12, C9

1000pF Chip Capacitors

GRM1885C1H102JA01

Murata

C10, C14,C7

10uF,25VChip Capacitors

—

—

C5

24pF Chip Capacitors

—

Murata

R1,R2,C1,C2,C8,C6

NC

—

—

U1

LM1117

    

PCB

FR-4 ,1.6mm, Ɛr4.5

—

  

 

 

 

 

 

 

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