HC-DSM09S0P5N 136–941 MHz, 0.5W, 7.5V Broadband RF Power Transistor

Output Stage VHF Band Handheld Radio Output Stage UHF Band Handheld Radio Output Stage for 700–800 MHz Handheld Radio Driver for 10–1000 MHz Applications 136–941 MHz, 0.5W, 7.5V Broadbank RF Power Transistor

contact us:lina@glhcoptical.com

 

 


N-Channel Enhancement-Mode MOSFET

Designed for handheld two–way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and Broadband performance of this device make it ideal for large–signal, common–source amplifier applications in handheld radio equipment.

 


Typical Broadband EVB Performance (IDQ=50mA, TA = 25℃, CW)

VDD

Freq.

Gmax

Pout

PAE

[V]

[MHz]

[dB]

[dBm]

[Watts]

[%]

7.5

400

19.8

28.3

0.67

59.6

440

20.7

29.2

0.83

76.9

480

21.0

28.9

0.77

74.6

520

17.9

28.6

0.73

71.1

Ÿ Capable of handling 20:1 VSWR @ 9Vdc, 0.8Watts, CW

 

 

 Features

Ÿ Characterized for Operation from 136 to 941 MHz

Ÿ Unmatched Input and Output Allowing Broad Frequency Range Utilization

Ÿ Integrated ESD Protection

Ÿ Broadband – Full Power Across the Band

Ÿ Exceptional Thermal Performance

Ÿ Extreme Ruggedness 

 

Typical Applications

Ÿ Output Stage VHF Band Handheld Radio

Ÿ Output Stage UHF Band Handheld Radio

Ÿ Output Stage for 700–800 MHz Handheld Radio

Ÿ Driver for 10–1000 MHz Applications

 

 

Table1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

–0.5, +20

Vdc

Gate-Source Voltage

VGS

–0.5, +8

Vdc

Operating Voltage

VDD

+0, +9

Vdc

Storage Temperature Range

Tstg

–65 to +150

Case Operating Temperature

TC

–40 to +150

Operating Junction Temperature

TJ

–40 to +150

Power Dissipation @TC=25℃

PD

3.0

Watts

 

 

Table 2. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2, passes 2500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

 

 

 

Table 3. Electrical Characteristics (TA=25℃ unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

Unit

Off Characteristics

Gate-Source Leakage Current

(VGS=5Vdc, VDS=0Vdc)

IGSS

-

-

500

nAdc

Zero Gate Voltage Drain Leakage Current

(VDS=16Vdc, VGS=0Vdc)

IDSS

-

-

1

uAdc

Zero Gate Voltage Drain Leakage Current

(VDS=7.5Vdc, VGS=0Vdc)

IDSS

-

-

500

nAdc

 

On Characteristics

Gate Threshold Voltage (VDS=7.5Vdc, ID=1mA)

VGS(th)

1.6

1.8

2.0

Vdc

Gate Quiescent Voltage (VDD=7.5Vdc, ID=50mA Measured in Functional Test)

VGS(Q)

2.2

2.4

2.8

Vdc

Drain-Source On-Voltage (VGS=5Vdc, ID=100mA)

VDS(ON)

-

0.25

-

Vdc

 

Dynamic Characteristics

 

Reverse Transfer Capacitance

(VDG=7.5V, Level=30mVac@1MHz)

Crss

-

0.21

-

pF

Output Capacitance

(VDS=7.5V, Level=30mVac@1MHz)

Coss

-

1.6

-

pF

Input Capacitance

(VGS=5V, Level=30mVac@1MHz)

Ciss

-

8.0

-

pF

 

 

Typical Performances (In DuSemi Narrowband Test DEMO, 50 Ohm system)

Frequency=440MHz, VDD=7.5Vdc, ID(Q)=50mA, Pin=9dBm, TA=25℃

Output Power 

Pout

-

0.61

-

Watts

Power Gain

GPS

-

19.0

-

dB

Drain Efficiency

 

 

 

 

 

ηD

-

66.5

-

%

 

 

 

Broad Band Evaluation Circuit (@VDD = 7.5V, f = 440 MHz)

 

5868fbb71d868e3515ca269bccaaf15.png

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

                                                          Test Circuit Component Layout

 

 

 

 

Table 4. Test Circuit Component Designations and Value

 

Part

Description

Part Number

Manufacturer

R3

470Ohm

R4

6.8KOhm

L1, L2

4.7nH

L3

8 Turns D: 0.5 mm,

φ 2.4 mm Enamel Wire

C3,C15,

100pF Chip Capacitors

GQM21P5C1H101JB01

Murata

C4

18pF Chip Capacitors

GRM1885C1H201JA01

Murata

C12, C9

1000pF Chip Capacitors

GRM1885C1H102JA01

Murata

C10, C14,C7

10uF,25VChip Capacitors

C5

24pF Chip Capacitors

Murata

R1,R2,C1,C2,C8,C6

NC

U1

LM1117

   

PCB

FR-4 ,1.6mm, Ɛr4.5

 

 

Typical   Characterisitics 

 

1Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin

 

VDD

ID(Q)

Pin

Freq

Pout

Gain

ηD

[V]

[mA]

[dBm]

[MHz]

[dBm]

[Watts]

[dB]

[%]

7.5

50

9

400

26.7

0.47

17.6

50.7

440

27.9

0.61

19.0

66.5

480

27.6

0.57

18.5

64.8

520

25.7

0.37

16.8

53.7

 

 

 

 

 

 

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