Product profile

 General description

 A 31W N-Channel LDMOS RF power transistor designed for broadcasttransmitter applications with frequencies from 136 to 941MHz. The high gain, ruggedness and Broadband performance of this device make it ideal for large–signal, common–source amplifier applications in digital transmitter applications.

      

Ÿ Production test performance  ( T_A=25°C , CW class-AB)

F (MHz)	VDS(V)	IDQ(mA)	PL(W)	Gp(dB)	ηD (%)
860	28	100	31	15	65

 

Ÿ Load Mismatch /Ruggedness

 

F (MHz)	VSWR	Pin(W)	Test Voltage	Result
860	>10:1 at all Phase Angles	1.0 (3dB Overdrive)	32Vdc	No Device Degradation

 

   Features

Ÿ Integrated ESD protection

Ÿ 
Unmatched Input and Output Allowing Wide Frequency Range Utilization

Ÿ Integrated Stability Enhancements

Ÿ Excellent ruggedness

Ÿ High power gain

Ÿ High efficiency

Ÿ Excellent reliability

Ÿ Easy power control

Ÿ Suitable for linear application: TETRA,SSB,LTE

Ÿ In Tape and Reel. T1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.

 

  Typical Applications

Ÿ Output Stage VHF/UHF Band Mobile Radio

Ÿ Industrial, scientific and medical applications

Ÿ Driver for 10–1000 MHz Applications

 

Maximum ratings

 

Table 1. Maximum ratings

 

Rating	Symbol	Value	Unit
Drain–Source Voltage	VDSS	-0.5, +65	Vdc
Gate–Source Voltage	VGS	-5, +6	Vdc
Storage Temperature Range	Tstg	–65 to +150	°C
Case Operating Temperature	TC	150	°C
Operating Junction Temperature	TJ	150	°C

 

      Thermal characteristics

 

       Table 2. Thermal characteristics

Symbol	Parameter	Conditions	Typ	Unit
Rth(j-c)	thermal resistance from junction to case	Tcase = 79℃; PL =31W (CW)	0.63	℃/W

 

 

 

     ESD Protection Characteristics

 

      Table 3. Thermal characteristics

Test Methodology	Class
Human Body Model	2B

 

 Characteristics

 Table 4. Static / Dynamic characteristics

T_j = 25℃ unless otherwise specified

Characteristic	Symbol	Min	Typ	Max	Unit
Drain–Source Breakdown Voltage (VGS = 0, ID = 10µAdc)	V(BR)DSS	70	—	—	Vdc
Zero Gate Voltage Drain Current (VDS =28 Vdc, VGS = 0)	IDSS	—	—	1	µAdc
Gate–Source Leakage Current (VGS =5 Vdc, VDS = 0)	IGSS	—	—	1	µAdc
Gate Threshold Voltage (VDS = 10 Vdc, ID = 1mAdc)	VGS(th)	0.5	1.0	1.5	Vdc
Gate Quiescent Voltage (VDS =28 Vdc, ID = 100mAdc)	VGS(q)	1.0	1.5	3.0	Vdc
Drain cut-off current (VDS =10 Vdc, VGS = 6Vdc)	IDSX	17	22	—	Adc
Drain–Source on-state resistance  (VGS = 6 Vdc, ID = 3.7 A)	RDS(on)	—	0.24	—	Ω
Input Capacitance (VDS = 32 Vdc, VGS = 0, f = 1.0 MHz)	Ciss	—	170	—	pF
Output Capacitance (VDS = 32 Vdc, VGS = 0, f = 1.0 MHz)	Coss	—	60	—	pF
Reverse Transfer Capacitance (VDS = 32 Vdc, VGS = 0, f = 1.0 MHz)	Crss	—	10	—	pF

 

                                                                                 

 Table 5. RF functional characteristics

 

Mode of operation: CW; f = 860 MHz; RF performance at V_DS = 28 V; I_Dq = 100 mA; T_case = 25℃;

Symbol	Characteristic	Condition	Min	Typ	Max	Unit
GP	Power Gain	PL = 31 W VDS = 28 V   IDQ=100mA f = 860 MHz	15	16	—	dB
ηD	Drain Efficiency		60	65	—	%

 

6. Test information

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V_DD=28V，f=860MHz，I_DQ=100mA

 

Fig 1.Power gain and drain efficiency as function of load power; typical values

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

   

 

 

 

 

 

 

 

 

 

f=860MHz， V_DD=28V    

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f=860MHz I_DQ=100mA

 

 

Fig 2. Power Gain versus Output Power

 

 

 

 

 

Package outline

TO270-2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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